onsemi NTHS4101PT1G
$ 0.471
Production
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Min
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Inventory History
3 month trend: +2.19%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi NTHS4101PT1G provided by its distributors.
P-Channel 20 V 35 mOhm 1.3 W Surface Mount Power MOSFET - CASE 1206A
Single P-Channel ChipFET™ Power MOSFET -20V -6.7A 34mΩ
NTHS4101PT1G P-CHANNEL MOSFET TRANSISTOR, 6.7 A, 20 V, 8-PIN CHIPFET
MOSFET, P CH, -20V, -4.8A, CHIPFET-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1.3W; Transistor Case Style: ChipFET; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +2.19%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.8 A
Current Rating-4.8 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance34 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance2.1 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-1.5 V
Number of Channels1
Number of Elements1
Power Dissipation1.3 W
Rds On Max34 mΩ
Resistance21 MΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage-1.5 V
Turn-Off Delay Time75 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length3.1 mm
Width1.7 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements