onsemi NTD4856NT4G
$ 0.241
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-17
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2013-01-11
LTD Date2013-07-11
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Related Parts
STMicroelectronicsSTD17NF03LT4
N-channel 30 V, 0.038 Ohm, 17 A STripFET(TM) II Power MOSFET in DPAK package
Descriptions
Descriptions of onsemi NTD4856NT4G provided by its distributors.
Power MOSFET 25V 89A 4.7 mOhm Single N-Channel DPAK
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 13.3A Ta 89A Tc 16.8A 2.14W 7.5ns
Trans MOSFET N-CH 25V 16.8A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 13.3A I(D), 25V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 25V 13.3A/89A DPAK
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)13.3 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time7.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.241 nF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2.14 W
Rds On Max4.7 mΩ
Rise Time22.5 ns
Schedule B8541290080
Turn-Off Delay Time27.2 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements