onsemi NTD4815N-1G
$ 0.241
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-07-21
LTD Date2011-01-21
Descriptions
Descriptions of onsemi NTD4815N-1G provided by its distributors.
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
Power MOSFET 30 V 35 A Single N-Channel DPAK/IPAK
Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Tube
6.9 A 30 V 0.025 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.26W(Ta)，32.6W(Tc) 20V 2.5V@ 250µA 6.6nC@ 4.5 V 1individualNChannel 30V 15mΩ@ 30A,10V 8.5A 770pF@12V TO-251 Through hole mounting 6.73mm*2.38mm*6.35mm
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.9 A
Current Rating35 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time21.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance770 pF
Max Operating Temperature175 °C
Max Power Dissipation32.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.92 W
Rds On Max15 mΩ
Rise Time21.4 ns
Schedule B8541290080
Turn-Off Delay Time11.4 ns
Voltage Rating (DC)30 V
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements