onsemi MUN5230DW1T1G

Name: onsemi MUN5230DW1T1G
Brand: onsemi
SKU: MUN5230DW1T1G

on Semi MUN5230DW1T1G Dual NPN Bipolar Transistor, 0.1 A, 50 V, 6-PIN SOT-363

$ 0.066

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Distributor		SKU		Min	Pkg
Avnet		MUN5230DW1T1G	3,000	3K						0.032	1d
Newark	3	MUN5230DW1T1G	230	5	Cut Tape		0.166	0.108	0.074	0.074
Verical		MUN5230DW1T1G	12,000	298					0.019	0.019
Arrow Electronics		MUN5230DW1T1G	12,000	1		0.032	0.019	0.019	0.019	0.019
DigiKey	3	MUN5230DW1T1GOSCT-ND	8,355	1	Cut Tape	0.270	0.164	0.102	0.066	0.066

Inventory History

3 month trend: +19.41%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5230DW1T1G.

Electro Sonic

Datasheet6 pages13 years ago

IHS

Upverter

element14 APAC

Farnell

Inventory History

3 month trend:

+19.41%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-11-25

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiMUN5330DW1T1G

ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363

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Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm

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onsemiMUN5314DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm

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Descriptions

Descriptions of onsemi MUN5230DW1T1G provided by its distributors.

ON SEMI MUN5230DW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 50 V, 6-PIN SOT-363

RS (Formerly Allied Electronics)

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

IHS

Dual NPN Bipolar Digital Transistor (BRT)

onsemi

MUN Series 50V 100 mA 1 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

Future Electronics

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Verical

Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN

Digi-ic_SMART PIONEER

BRT TRANS, NPN, 50V, SOT-363-6; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 1kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.

North Star Micro