onsemi MUN5214DW1T1G

Name: onsemi MUN5214DW1T1G
Brand: onsemi
SKU: MUN5214DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm

$ 0.059

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Distributor		SKU		Min	Pkg
Future Electronics	5	MUN5214DW1T1G	615,000	3K	Tape & Reel					0.032
Avnet	3	MUN5214DW1T1G	75,000	3K						0.028	7h
Newark	3	MUN5214DW1T1G	239	1	Cut Tape	0.273	0.273	0.111	0.063	0.060
Master Electronics		MUN5214DW1T1G	42,000	3K						0.023
Onlinecomponents.com		MUN5214DW1T1G	42,000	3K	Bulk					0.023

Inventory History

3 month trend: -44.93%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5214DW1T1G.

IHS

Datasheet11 pages4 years ago

Upverter

onsemi

Farnell

element14 APAC

Inventory History

3 month trend:

-44.93%

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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onsemiMUN5314DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm

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Descriptions

Descriptions of onsemi MUN5214DW1T1G provided by its distributors.

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 47 kohm

Avnet Silica

DUAL NPN BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

ComSIT Distribution GmbH

MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

Future Electronics

80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS

Dasenic

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Verical

100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR

Component Stockers USA

TRANS, 50V, 10/47KOHM, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resisto

Farnell

Brt Transistor, 50V, 47K/10Kohm, Sot-363; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:47Kohm; Ratio De La Resistencia, R1/R2:0.21 |Onsemi MUN5214DW1T1G

Newark

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.

North Star Micro