onsemi MUN5114T1G

Name: onsemi MUN5114T1G
Brand: onsemi
SKU: MUN5114T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

$ 0.04

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		MUN5114T1G	330,000	3K						0.016	2d
Newark	3	MUN5114T1G	9,059	5	Cut Tape		0.102	0.064	0.044	0.044
Verical	2	MUN5114T1G	195,000	20135
Arrow Electronics	2	MUN5114T1G	194	1		0.033	0.018	0.012	0.012	0.012
Rochester Electronics		MUN5114T1G	238,161					0.020	0.017	0.015	16h

Inventory History

3 month trend: -5.80%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5114T1G.

Master Electronics

Datasheet12 pages9 years ago

IHS

Newark

_legacy Avnet

DigiKey

Inventory History

3 month trend:

-5.80%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMUN5114T1G

onsemiMUN5133T1G

Price @ 1000

$ 0.04

$ 0.041

Stock

2,404,359

639,975

Authorized Distributors

Mount

Case/Package

Polarity

PNP

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

hFE Min

Power Dissipation

202 mW

310 mW

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MUN5114T1G provided by its distributors.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

IHS

MUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-323

Future Electronics

PNP Bipolar Digital Transistor (BRT)

onsemi

250mV@ 300¦ÌA,10mA PNP - Pre-Biased 310mW 500nA 50V 100mA SOT-323 2.1mm*1.24mm*850¦Ìm

UnikeyIC

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Farnell

Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R

Verical

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

Digi-ic_SMART PIONEER

Transistor Polarity:Single PNP; Collector Emitter Voltage Max NPN:-; Collector Emitter Voltage Max PNP:50V; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:47kohm; No. of Pins:3 Pin RoHS Compliant: Yes

Newark

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

North Star Micro