Descriptions of onsemi MMUN2211LT1G provided by its distributors.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Bipolar Transistors (BJT); MMUN2211LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN2211LT1G NPN DIGI TRANSISTOR, 100MA 50 V 10 KOHM, RATIO OF 1, 3-PIN SOT-23
35@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
MMUN2211L Series 1.8 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-23
NPN Bipolar Digital Transistor (BRT)
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
onsemi NPNdigital transistor, SOT-23encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
TRANSISTOR, RF, NPN, 50V, SOT-23-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; R
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.