onsemi MMUN2115LT1G

Name: onsemi MMUN2115LT1G
Brand: onsemi
SKU: MMUN2115LT1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

$ 0.028

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	MMUN2115LT1G	87,000	42K							2d
Arrow Electronics	4	MMUN2115LT1G	57,438	1		0.069	0.041	0.039	0.034	0.031
Verical	5	MMUN2115LT1G	57,438	358					0.034	0.031
Rochester Electronics		MMUN2115LT1G	44,600					0.020	0.017	0.015	1h
DigiKey	3	MMUN2115LT1GOSCT-ND	1,990	1	Cut Tape	0.170	0.102	0.063	0.040	0.040

Inventory History

3 month trend: +137%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMUN2115LT1G.

Master Electronics

Datasheet12 pages9 years ago

IHS

onsemi

element14 APAC

Newark

Inventory History

3 month trend:

+137%

CAD Models

Download onsemi MMUN2115LT1G symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint	3D	Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

onsemiMMUN2115LT1G

onsemiMMUN2116LT1G

Price @ 1000

$ 0.028

$ 0.037

Stock

5,697,648

1,182,194

Authorized Distributors

Mount

Case/Package

SOT-23-3

Polarity

PNP

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

250 mV

hFE Min

160

Power Dissipation

246 mW

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-10-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiMMUN2116LT1G

ON SEMI MMUN2116LT1G PNP BIPOLAR TRANSISTOR, 0.1 A, 50 V, 3-PIN SOT-23

Details

onsemiMMUN2133LT1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Details

onsemiMMUN2132LT1G

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

Details

Diodes Inc.DDTA114ECA-7-F

Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

Details

Diodes Inc.DDTA114YCA-7-F

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Details

Diodes Inc.DDTA113ZCA-7-F

DDTA Series 200 mW 1 KO / 10 KO PNP Pre-Braised Small Signal Transistor - SOT-23

Details

Descriptions

Descriptions of onsemi MMUN2115LT1G provided by its distributors.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

IHS

MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23

Future Electronics

PNP Bipolar Digital Transistor (BRT)

onsemi

Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

Verical

PNP - Pre-Biased 400mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

Dasenic

Digital Transistor PNP 100mA R=10K SOT23

RS APAC

100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

Component Stockers USA

TRANSISTOR, RF, PNP, 50V, SOT-23-3; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resis

Farnell

Brt Transistor, 50V, 10Kohm, Sot-23, Full Reel; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:50V; Frecuencia De Transición Ft:-; Disipación De Potencia Pd:246Mw; Corriente De Colector Dc:100Ma; Núm. De Contactos:3 |Onsemi MMUN2115LT1G

Newark

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.

North Star Micro