Descriptions of onsemi MJE5852G provided by its distributors.
Bipolar (Bjt) Single Transistor, Pnp, 400 V, 80 W, 8 A, 15 Rohs Compliant: Yes |Onsemi MJE5852G
ON SEMI MJE5852G PNP HIGH VOLTAGE BIPOLAR TRANSISTOR, 8 A, 400 V, 3-PIN TO-220AB
8.0 A, 400 V PNP Bipolar Power Transistor
SWITCHMODE PNP SILICON POWER TRANSISTOR Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 8A 400V 80W PNP
Transistor PNP 400V 8A 80W TO220AB
onsemi PNPTransistor, TO-220ABencapsulation, Through hole mounting, Maximum DC collector current-8 A, maximum collector-emission voltage-400 V
TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: