Descriptions of onsemi MJ802G provided by its distributors.
TRANSISTOR, BIPOLAR, SI, NPN, HIGH POWER, VCEO 100VDC, IC 30A, PD 200W, VCBO 100VDC
30 A, 90 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
MJ Series 90 V 30 A Screw Mount High Power NPN Silicon Transistor - TO-204AA
BIPOLAR Transistor, NPN, 90V TO-204; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V;
Bipolar Transistors - BJT 30A 90V 200W NPN
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
onsemi NPNTransistor, TO-204AAencapsulation, Through hole mounting, Maximum DC collector current30 A, maximum collector-emission voltage90 V
Bipolar Transistor, Npn, 90V To-204; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:90V; Frecuencia De Transición Ft:2Mhz; Disipación De Potencia Pd:200W; Corriente De Colector Dc:30A; Ganancia De Corriente Dc Hfe:2 |Onsemi MJ802G
TRANSISTOR, BIPOL, NPN, 90V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 90V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 200W; DC Collector Current: 30A; DC Current Gain hFE: 25hFE; Transistor Case