onsemi MBD54DWT1G
MBD54DWT1G Series 30 V 600 mA Dual Schottky Barrier Diode - SOT-363
$ 0.111
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -15.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.111
$ 0.077
Stock
2,055,231
577,804
Authorized Distributors
6
1
Mount
-
-
Case/Package
SOT-363-6
SOT-363-6
Forward Voltage
1 V
1 V
Reverse Voltage (DC)
-
-
Forward Current
200 mA
-
Max Reverse Leakage Current
2 µA
2 µA
Reverse Recovery Time
5 ns
5 ns
Capacitance
10 pF
10 pF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.10.00.70
Introduction Date2000-08-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi MBD54DWT1G provided by its distributors.
MBD54DWT1G Series 30 V 600 mA Dual Schottky Barrier Diode - SOT-363
ON SEMI MBD54DWT1G, DUAL SMT SCHOTTKY DIODE, ISOLATED,30V 200MA,5NS,6-PIN SOT-363
Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.2A, 30V V(RRM), Silicon
onsemi Schottky Diode, 200mA, 30V, SMD, SOT-363 (SC-88), 6-Pin
SCHOTTKY DIODE, 200MA FORWARD; Diode Configuration:Dual Isolated; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:400mV; Forward Surge Current Ifsm Max:600mA; Operating Tempe
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -15.58%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Average Rectified Current200 mA
Capacitance10 pF
Current Rating200 mA
Element ConfigurationDual
Forward Current200 mA
Forward Voltage1 V
Max Forward Surge Current (Ifsm)600 mA
Max Operating Temperature125 °C
Max Output Current200 mA
Max Power Dissipation150 mW
Max Repetitive Reverse Voltage (Vrrm)30 V
Max Reverse Leakage Current2 µA
Max Reverse Voltage (DC)30 V
Max Surge Current600 mA
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
Peak Non-Repetitive Surge Current600 mA
Peak Reverse Current2 µA
Power Dissipation150 mW
Recovery Time5 ns
Reverse Recovery Time5 ns
Reverse Standoff Voltage25 V
Schedule B8541100070
TerminationSMD/SMT
Voltage Rating (DC)30 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements