onsemi KSC2690AYSTU
Bipolar (BJT) Single Transistor, NPN, 160 V, 155 MHz, 20 W, 1.2 A, 160
$ 0.472
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -34.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.472
$ 0.318
Stock
246,393,697
423,811
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-126-3
TO-126
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
80 V
Max Collector Current
1.2 A
1.2 A
Transition Frequency
155 MHz
155 MHz
Collector Emitter Saturation Voltage
400 mV
400 mV
hFE Min
160
160
Power Dissipation
1.2 W
1.2 W
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-12-22
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
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Small Signal Bipolar Transistor, 1.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
Descriptions
Descriptions of onsemi KSC2690AYSTU provided by its distributors.
Bipolar (BJT) Single Transistor, NPN, 160 V, 155 MHz, 20 W, 1.2 A, 160
Bipolar Transistors (BJT); KSC2690AYSTU; ON SEMICONDUCTOR; NPN; 3; 160 V; 1.2 A
Trans GP BJT NPN 160V 1.2A 1200mW 3-Pin(3+Tab) TO-126 Tube
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
onsemi NPNTransistor, TO-126encapsulation, Through hole mounting, Maximum DC collector current1.2 A, maximum collector-emission voltage160 V
TRANSISTOR, BIPOL, NPN, 160V, TO-225AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 155MHz; Power Dissipation Pd: 20W; DC Collector Current: 1.2A; DC Current Gain hFE: 160hFE;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -34.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-126-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product155 MHz
hFE Min160
Max Collector Current1.2 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.2 W
Schedule B8541290080
Transition Frequency155 MHz
Voltage Rating (DC)160 V
Dimensions
Height14.2 mm
Length8 mm
Width3.25 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements