onsemi HUF75639G3

Name: onsemi HUF75639G3
Brand: onsemi
SKU: HUF75639G3

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

$ 1.644

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Distributor		SKU		Min	Pkg
DigiKey		HUF75639G3FS-ND	295	1	Tube	4.460	4.460	2.470	1.710	1.568
Avnet		HUF75639G3	30,150	450					1.511	1.475	16h
Newark		HUF75639G3	368	1		5.070	4.410	2.860	2.640	2.640
Verical	5	HUF75639G3	30,600	450					1.577	1.577
Rochester Electronics		HUF75639G3	925					1.570	1.400	1.320	14h

Inventory History

3 month trend: -17.53%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HUF75639G3.

IHS

Datasheet15 pages3 years ago

Datasheet10 pages24 years ago

Datasheet15 pages3 years ago

Upverter

Master Electronics

onsemi

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Inventory History

3 month trend:

-17.53%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi HUF75639G3 provided by its distributors.

N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

onsemi

Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

MOSFET, N CH 56A 100V TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:56A; Package / Case:TO-247; Power Dissipation Pd:200W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Fairchild Semiconductor