onsemi HUF75329D3ST
$ 0.554
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.554
$ 1.046
Stock
355,695
106,450
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
TO-252-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-
-
Rds On Max
26 mΩ
26 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
128 W
128 W
Input Capacitance
1.06 nF
1.06 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs | MOSFET N-CH 60V 20A DPAK
Descriptions
Descriptions of onsemi HUF75329D3ST provided by its distributors.
N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
N-Channel 20 A 55 V 0.026 Ohm SMT UltraFET Mosfet- TO-252-3
Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation Pd:128W ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.06 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation128 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation128 W
Rds On Max26 mΩ
Resistance26 MΩ
Rise Time30 ns
Turn-Off Delay Time10 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)55 V
Dimensions
Height2.517 mm
Length6.73 mm
Width2.39 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements