onsemi H11G1M

Name: onsemi H11G1M
Brand: onsemi
SKU: H11G1M

Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP W Bulk

$ 0.285

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	5	H11G1M	753	1K					0.227	0.212	11h
Newark	3	H11G1M	1,573	1		0.259	0.259	0.259	0.259	0.259
Verical	2	H11G1M	59,148	21				0.283	0.282	0.282
Arrow Electronics		H11G1M	59,148	1		0.294	0.294	0.288	0.282	0.282
Future Electronics	2	H11G1M	4,000	75	Tube			0.300	0.290	0.275

Inventory History

3 month trend: -28.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi H11G1M.

Master Electronics

Datasheet10 pages5 years ago

Datasheet10 pages1 year ago

TME

IHS

Upverter

onsemi

Inventory History

3 month trend:

-28.55%

CAD Models

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Supply Chain

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.40.80.00

Introduction Date1998-11-10

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi H11G1M provided by its distributors.

Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP W Bulk

Avnet Japan

6-Pin DIP High Voltage Photodarlington Output Optocoupler

onsemi

DIP-6 Through Hole Single Channel 100 V 4170 Vrms Photo Darlington Optocoupler

Future Electronics

OPTOCOUPLER, DARLINGTON, 7.5KV, DIP-6; No. of Channels: 1 Channel; Optocoupler Case Style: DIP; No. of Pins: 6Pins; Forward Current If Max: 60mA; Isolation Voltage: 7.5kV; CTR Min: 500%; Collector Emitter Voltage V(br)ceo: 100V

Farnell

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

Fairchild Semiconductor