onsemi FQA24N60

Name: onsemi FQA24N60
Brand: onsemi
SKU: FQA24N60

N-Channel Power MOSFET, QFET®, 600V, 23.5A, 240mΩ, TO-3P

$ 4.1

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Distributor		SKU		Min	Pkg
Newark		FQA24N60	602	1		9.780	6.930	6.520	6.520	6.520
Verical	4	FQA24N60	183	2			3.424	3.424	3.424	3.424
Arrow Electronics	2	FQA24N60	1,961	1		4.766	4.766	4.717	4.241	4.241
Rochester Electronics		FQA24N60	6,720					4.130	3.700	3.480	10h
DigiKey		FQA24N60FS-ND	279	1	Tube	9.230	9.230	5.422	4.140	4.140

Inventory History

3 month trend: +4.26%

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Datasheets & Documents

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Newark

Datasheet0 pages0 years ago

Upverter

IHS

onsemi

Farnell

Inventory History

3 month trend:

+4.26%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-06-26

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQA24N60 provided by its distributors.

N-Channel Power MOSFET, QFET®, 600V, 23.5A, 240mΩ, TO-3P

onsemi

Transistor: unipolar, N-MOSFET; 600V; 23.5A; 310W; TO3P

Fly-Wing Technology

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:23.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):240mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:94A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor