onsemi FMB200
$ 0.176
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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PanasonicDMG264120R
SC,Composite Transistor PNP + NPN Dual, For Digital circuits, VCEO:50V, IC:500mA
Descriptions
Descriptions of onsemi FMB200 provided by its distributors.
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.5A 700mW 6-Pin TSOT-23 T/R
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-45 V
Collector Emitter Saturation Voltage-200 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating-500 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)-6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min100
Max Breakdown Voltage45 V
Max Collector Current500 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation700 mW
Min Operating Temperature-55 °C
Number of Elements2
PolarityPNP
Power Dissipation700 mW
Transition Frequency300 MHz
Voltage Rating (DC)-45 V
Dimensions
Height900 µm
Length3 mm
Width1.7 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements