onsemi FJP2160DTU

Trans GP BJT NPN 800V 2A 100000mW 3-Pin(3+Tab) TO-220 Tube

Power Bipolar Transistor, 2A I(C), 1-Element, NPN

High-Voltage Fast-Switching NPN Power Transistor. ONSSPCTRNSTLT1T0R;

Bipolar Transistors - BJT NPN/1600V/3A

The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors; it is not prone to static dv/dt failures.