onsemi FGH50T65UPD
$ 3.755
NRND
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-12-07
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
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Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube
Descriptions
Descriptions of onsemi FGH50T65UPD provided by its distributors.
650V, 50A, Field Stop Trench IGBT 650V, 50A, Field Stop Trench IGBT
Trans IGBT Chip N-CH 650V 100A 340mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247AB
IGBT Transistors 650 V 100 A 240 W
Fs1Tigbt To247 50A 650V Rohs Compliant: Yes
IGBT TRENCH/FS 650V 100A TO247-3
INSULATED GATE BIPOLAR TRANSISTO
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage1.65 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current100 A
Element ConfigurationSingle
Fall Time29 ns
Max Collector Current100 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation340 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation340 W
Reverse Recovery Time53 ns
Rise Time77 ns
Turn-Off Delay Time160 ns
Turn-On Delay Time32 ns
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements