onsemi FDZ193P
$ 0.219
Obsolete
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-06
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
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Descriptions
Descriptions of onsemi FDZ193P provided by its distributors.
P-Channel PowerTrench® WL-CSP MOSFET -20V, -1A, 90mΩ
P-Channel 20 V 90 mOhm SMT PowerTrench Mosfet - WLCSP-6
MOSFET, P CH, -20V, -3A, WL-CSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:WL-CSP; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight54 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance300 mΩ
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance660 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-900 mV
Number of Elements1
Power Dissipation1.5 W
Rds On Max90 mΩ
Resistance90 MΩ
Rise Time10 ns
Threshold Voltage-900 mV
Turn-Off Delay Time28 ns
Turn-On Delay Time13 ns
Dimensions
Height650 µm
Length1 mm
Width1.5 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements