onsemi FDU8882
Production
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-15
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
LTB Date2008-12-02
LTD Date2009-06-02
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W
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Descriptions
Descriptions of onsemi FDU8882 provided by its distributors.
Power MOSFET, N Channel, 30 V, 55 A, 0.0115 ohm, TO-251AA, Through Hole
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
55W(Tc) 20V 2.5V@ 250µA 33nC@ 10V 1individualNChannel 30V 11.5mΩ@ 35A,10V 55A 1.26nF@15V TO-251 Through hole mounting 10.67mm*4.7mm*16.3mm
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Transistor Case Style:I-PAK; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:TO-251; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.8mm; Lead Spacing:2.285mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:55W; Pulse Current Idm:50A; Reverse Recovery Time trr Typ:82ns; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12.6 A
Current Rating55 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.26 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation55 W
Rds On Max11.5 mΩ
Rise Time82 ns
Turn-Off Delay Time40 ns
Voltage Rating (DC)30 V
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements