onsemi FDP039N08B-F102
$ 4.24
Production
Price and Stock
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SKU
Min
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Bulk Pricing
Inventory History
3 month trend: -0.26%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi FDP039N08B-F102.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDP039N08B-F102 provided by its distributors.
Trans MOSFET N-CH Si 80V 171A 3-Pin(3+Tab) TO-220 Tube
N-Channel PowerTrench® MOSFET 80V, 171A, 3.9mΩ
Power Field-Effect Transistor, 120A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.26%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Resistance3.9 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.45 nF
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation214 W
Rds On Max3.9 mΩ
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi FDP039N08B-F102.
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements