onsemi FDMS3664S
$ 0.775
Production
Inventory History
3 month trend: -0.24%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-19
Lifecycle StatusProduction (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)
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Descriptions
Descriptions of onsemi FDMS3664S provided by its distributors.
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W ±20 @ Q 1|±12 @ Q 2 2.7V@ 250µA 29nC@ 10V 2individualNChannel 30V 8mΩ@ 13A,10V 13A，25A 1.765nF@15V SMD mount 6mm*5mm*1.1mm
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.24%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Weight171 mg
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.765 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1 W
Rds On Max8 mΩ
Turn-Off Delay Time19 ns
Turn-On Delay Time7.7 ns
Dimensions
Height1.1 mm
Length5 mm
Width5.9 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements