onsemi FDME820NZT
$ 0.446
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -1.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusProduction (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 week ago)
Related Parts
Descriptions
Descriptions of onsemi FDME820NZT provided by its distributors.
N-Channel PowerTrench® MOSFET 20V, 9A, 18mΩ
2.1W(Ta) 12V 1V@ 250µA 8.5nC@ 4.5V 1individualNChannel 20V 18mΩ@ 9A,4.5V 9A 865pF@10V MICROFET SMD mount 1.6mm*1.6mm*550μm
29V 9A 14m´Î@4.5V9A 2.1W 800mV@50uA 190pF@10V N Channel 865pF@10V 8nC@4.3V -55¡Í~+150¡Í@(Tj) MicroFET(1.6x1.6) MOSFETs ROHS
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -1.82%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins6
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance865 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.1 W
Rds On Max18 mΩ
Rise Time5 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time9 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements