Diodes Inc. DMN2014LHAB-7
$ 0.237
Production
Price and Stock
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SKU
Min
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Inventory History
3 month trend: +40.94%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN2014LHAB-7.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-12-16
Lifecycle StatusProduction (Last Updated: 6 months ago)
Related Parts
Diodes Inc.DMN2016LHAB-7
Small Signal Field-Effect Transistor, 7.5A I(D), N-Channel, Metal-oxide Semiconductor FET
Descriptions
Descriptions of Diodes Inc. DMN2014LHAB-7 provided by its distributors.
Transistor MOSFET Array Dual N-CH 20V 9.3A 6-Pin uDFN2030 T/R
Dual N-Channel 20 V 28 mOhm 16 nC 0.8 W Silicon Surface Mount Mosfet - UFDFN-6
MOSFET 2N-CH 20V 9A 6-UDFN / DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Small Signal Field-Effect Transistor, 9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R
MOSFET Dual N-Channel 20V 9A U-DFN2030-6
DiodesZetex NChannel EnhancedMOSTube, Vds=20 V, 9.3 A, U-DFN2030encapsulation, surface mount, 6Pin
N-Channel Mosfet, 20V VDS, 12±V VGS
Diodes Inc SCT
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Inventory History
3 month trend: +40.94%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins7
Number of Terminals4
Technical
Continuous Drain Current (ID)9 A
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time12 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.55 nF
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Rds On Max13 mΩ
Rise Time15.5 ns
Turn-Off Delay Time40.9 ns
Turn-On Delay Time6.9 ns
Dimensions
Height600 µm
Length3.05 mm
Width2.05 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Diodes Inc. DMN2014LHAB-7.