onsemi FDMD8580
$ 1.328
EOL
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-03-25
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
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Descriptions
Descriptions of onsemi FDMD8580 provided by its distributors.
Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ
Trans MOSFET N-CH 80V 16A 8-Pin PQFN EP T/R
MOSFET Dual NChnl Power Trench MOSFET
MOSFET 2N-CH 80V 16A/82A PWR56
This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight94.85095 mg
Technical
Continuous Drain Current (ID)82 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.875 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation59 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2.3 W
Rds On Max4.6 mΩ
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time25 ns
Dimensions
Height800 µm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements