onsemi FDC8886
$ 0.181
Production
Inventory History
3 month trend: +9.41%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi FDC8886 provided by its distributors.
N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
Single Pt8 N 30/20V Ssot6 |Onsemi FDC8886
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +9.41%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance465 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max23 mΩ
Rise Time1 ns
Schedule B8541290080
Turn-Off Delay Time11 ns
Turn-On Delay Time5 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements