onsemi FDC638P

Name: onsemi FDC638P
Brand: onsemi
SKU: FDC638P

Transistor MOSFET P-Channel 20V 4.5A (4500mA) 1.6W (Ta) Surface Mount SuperSOT-6

$ 0.203

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Verical	3	FDC638P	3,000	38				0.214	0.192	0.176
Arrow Electronics	2	FDC638P	5,235	1		0.363	0.325	0.285	0.266	0.258
Master Electronics		FDC638P	5,800	100				0.207	0.203	0.191
Onlinecomponents.com		FDC638P	5,800	100	Bulk			0.207	0.203	0.191
DigiKey	3	FDC638PCT-ND	6,571	1	Cut Tape	1.130	0.706	0.462	0.323	0.323

Inventory History

3 month trend: -16.96%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDC638P.

IHS

Datasheet7 pages2 years ago

Datasheet7 pages24 years ago

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onsemi

Newark

Inventory History

3 month trend:

-16.96%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDC638P provided by its distributors.

Transistor MOSFET P-Channel 20V 4.5A (4500mA) 1.6W (Ta) Surface Mount SuperSOT-6

Jameco

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

onsemi

ON SEMICONDUCTOR - FDC638P - MOSFET Transistor, P Channel, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -800 mV

Jak Electronics

P-CHANNEL 2.5V POWERTRENCH SPECIFIED MOSFET Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Fairchild Semiconductor

MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:-800mV; Power Dissipation Pd:1.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC638P; Termination Type:SMD; Uni / Bi Directional Polarity:P; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-800mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V

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