onsemi FDC3601N

Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ

Transistor MOSFET Array Dual N-CH 100V 1A 6-Pin TSOT-23 T/R

ON SEMICONDUCTOR - FDC3601N - Dual MOSFET, Dual N Channel, 1 A, 100 V, 0.5 ohm, 10 V, 2.6 V

onsemi digital transistor, TSOT-23encapsulation, SMD mount

Dual N-Channel 100 V 500 mOhm SMT Specified PowerTrench Mosfet - SSOT-6

TRANSISTOR Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, DUAL, N, SMD, SSOT-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 960mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 1A; Current Id Max: 1A; Drain Source Voltage Vds, N Channel: 100V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.37ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 2.6V; Voltage Vgs Rds on Measurement: 10V

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.