onsemi FCB20N60F-F085
$ 2.405
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
Pkg
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-07-26
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
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Descriptions
Descriptions of onsemi FCB20N60F-F085 provided by its distributors.
Trans MOSFET N-CH 600V 20A Automotive 3-Pin(2+Tab) TO-263AB T/R
MOSFET, N-Channel, 600V, 20A, 190mΩ,
405W(Tc) 30V 5V@ 250¦ÌA 102nC@ 10 V 1N 600V 195m¦¸@ 20A,10V 20A 2.035nF@25V D2PAK,TO-263 10.67mm*9.65mm*4.83mm
FCB20N60F_F085 - N-CHANNEL MOSFET 600V;
Power Field-Effect Transistor, 20A I(D), 600V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FCB20N60F_F085 Fairchild/ON Semiconductor
SuperFETTM is, Fairchild’s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance andlower gate charge performance.This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, andwithstand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for systemminiaturization and higher efficiency
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance195 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.035 nF
Max Operating Temperature150 °C
Max Power Dissipation405 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation405 W
Rds On Max195 mΩ
Rise Time66 ns
Turn-Off Delay Time211 ns
Turn-On Delay Time43 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements