onsemi DTC124EET1G

Name: onsemi DTC124EET1G
Brand: onsemi
SKU: DTC124EET1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

$ 0.045

Production

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor

SKU

Min

Pkg

Bulk Pricing

Avnet

DTC124EET1G

275,970

17242

17h

Newark

DTC124EET1G

54,000

12K

Cut Tape

Rochester Electronics

USD

15h

17143

USD

3 month trend: +6.04%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi DTC124EET1G.

Electro Sonic

Datasheet12 pages9 years ago

IHS

RS (Formerly Allied Electronics)

Future Electronics

Arrow Electronics

Inventory History

3 month trend:

+6.04%

CAD Models

Download onsemi DTC124EET1G symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	FILES
EE Concierge	SymbolFootprint
SnapEDA	Footprint	Download
Ultra Librarian	SymbolFootprint	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

onsemiDTC124EET1G

onsemiDTC124EET1

Price @ 1000

$ 0.045

$ 0.025

Stock

3,645,339

563,788

Authorized Distributors

Mount

Case/Package

SOT-416

Polarity

NPN

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

250 mV

hFE Min

Power Dissipation

200 mW

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-07-29

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiDTC115EET1G

Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R

Details

onsemiDTC114YET1G

Bipolar Transistors (BJT); DTC114YET1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA

Details

onsemiDTC124XET1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Details

ROHMDTC114YETL

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Details

NXP SemiconductorsBC847BT,115

Bipolar (BJT) Single Transistor, NPN, 45 V, 150 mW, 100 mA, 200

Details

ToshibaRN1106,LF(CT

Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

Details

Descriptions

Descriptions of onsemi DTC124EET1G provided by its distributors.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

IHS

Bipolar Junction Transistor Arrays - Bjt; |Onsemi DTC124EET1G

Newark

DTC124EET1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 22 KOHM, RATIO OF 1, 3-PIN SC-75

RS (Formerly Allied Electronics)

NPN Bipolar Digital Transistor (BRT)

onsemi

Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R

Verical

TRANS, NPN, 22K/22K, SC-75-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resisto

Farnell

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.

North Star Micro