onsemi BCP56
$ 0.17
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2019-10-12
LTD Date2020-04-12
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Related Parts
Diodes Inc.DCP56-16-13
TRANS NPN 80V 1A SOT-223 / Trans GP BJT NPN 80V 1A 1000mW 4-Pin(3+Tab) SOT-223 T/R
Descriptions
Descriptions of onsemi BCP56 provided by its distributors.
BCP56 Series NPN 80 V 1 W 1.2 A Surface Mount General Purpose Amplifier -SOT-223
80V 1W 1.2A NPN SOT-223 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1 A. Sourced from Process 39.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product130 MHz
hFE Min25
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)80 V
Dimensions
Height1.75 mm
Length6.5 mm
Width3.5 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements