onsemi ATP114-TL-H
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CAD Models
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CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-05
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descriptions
Descriptions of onsemi ATP114-TL-H provided by its distributors.
Single P-Channel 60 V 24 mOhm 92 nC 60 W Silicon Surface Mount Mosfet
P-Channel Power MOSFET, -60V, -55A, 16mOhm, Single ATPAK
P-Channel Power MOSFET, -60V, -55A, 16mΩ
Trans MOSFET P-CH Si 60V 55A 3-Pin(2+Tab) ATPAK T/R
Power Field-Effect Transistor, 55A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Pch 4V Drive Series/Reel |Onsemi ATP114-TL-H
MOSFET, P-CH, -60V, -55A, ATPAK-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -55A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; P
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin Bismuth
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)55 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time300 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation60 W
Rds On Max16 mΩ
Rise Time200 ns
Schedule B8541290080
Turn-Off Delay Time450 ns
Turn-On Delay Time19 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements