Nexperia PUMD9,115
$ 0.05
Production
Inventory History
3 month trend: +9.38%
CAD Models
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Alternate Parts
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Stock
13,975,426
1,342,926
1,342,926
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
TSSOP
TSSOP
Polarity
NPN, PNP
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
100 mV
-
-
hFE Min
100
100
100
Power Dissipation
300 mW
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-04-07
Lifecycle StatusProduction (Last Updated: 4 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 4 years ago)
Descriptions
Descriptions of Nexperia PUMD9,115 provided by its distributors.
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD9 Series 50 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363
Trans Digital BJT NPN/PNP 50V 100mA 300mW 6-Pin TSSOP T/R
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Digital transistors; NEXPERIA; PUMD9, 115; 6; NPN, PNP; 50 V; 100 mA
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
Transistor Polarity = NPN / Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / DC Current Gain (hFE) = 100 / Power Dissipation (Pd) mW = 200 / Typical Input Resistor kOhm = 10 / Typical Resistor Ratio kOhm = 4.7 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 10 / Operating Temperature Max. °C = 150 / Operating Temperature Min. °C = -65 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 100 / Operating Frequency MHz = 230
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD9 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 100mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Full Power Rating Temperature: 25°C; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 10kohm; Resistance R1 PNP: 10kohm; Resistance R2: 47kohm; Transistor Case Style: SOT-363
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Inventory History
3 month trend: +9.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight453.59237 mg
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage100 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
hFE Min100
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
Operating Supply Voltage50 V
PolarityNPN, PNP
Power Dissipation300 mW
Schedule B8541210080
Zener Voltage2.7 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance Statements