Nexperia 2N7002PS,115
$ 0.098
Production
Inventory History
3 month trend: -52.63%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-08
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Related Parts
NXP SemiconductorsBSH111,215
NEXPERIA - BSH111,215 - MOSFET Transistor, N Channel, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
Descriptions
Descriptions of Nexperia 2N7002PS,115 provided by its distributors.
Small Signal Field-Effect Transistor, 0.32A I(D), N-Channel, Metal-oxide Semiconductor FET
2.4V@ 250µA 0.8nC@ 4.5V 2individualNChannel 60V 1.6Ω@ 500mA,10V 50pF@10V TSSOP-6 SMD mount
2N7002PS Series N-Channel 60 V 1.6 Ohm 280 mW 0.8 nC SMT TrenchMOS FET - SOT-363
MOSFET, N CH, 60V, 1OHM, 320mA, SOT-363-6; Transistor Polarity:N Channel; Continuous Drain Current Id:320mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.75V ;RoHS Compliant: Yes
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
Inventory History
3 month trend: -52.63%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT
Contact PlatingTin
Number of Pins6
Number of Terminals6
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)320 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vds)60 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance50 pF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation990 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape & Reel
Power Dissipation420 mW
Rds On Max1.6 Ω
Resistance1.6 Ω
Rise Time4 ns
Schedule B8541210080
Turn-Off Delay Time10 ns
Turn-On Delay Time3 ns
Dimensions
Height1.1 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements