Infineon IRLR3410PBF

Name: Infineon IRLR3410PBF
Brand: Infineon
SKU: IRLR3410PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.105 Ohm; Id 17A; D-pak (TO-252AA); Pd 79W

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR3410PBF	0	1200	Bulk					1.790	5h
Farnell	IRLR3410PBF	0	1		1.115*	0.902*	0.636*	0.444*	0.435*	16h
Win Source	WS-IRLR3410PBF	36,050	210					0.204	0.189	17h
Worldway Electronics	IRLR3410PBF	15,403	7	Tube		0.586	0.568	0.538	0.538	16h
Fly-Wing Technology	IRLR3410PBF	184,715			0.403	0.331	0.320	0.300	0.300	15h

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR3410PBF.

IHS

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-06-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLR3410PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.105Ohm;ID 17A;D-Pak (TO-252AA);PD 79W

RS (Formerly Allied Electronics)

On a Reel of 3000, IRLR3410TRLPBF N-Channel MOSFET, 17 A, 100 V HEXFET, 3-Pin DPAK Infineon

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Single N-Channel 100 V 155 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA

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100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

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Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 100V, 15A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:79W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; On State resistance @ Vgs = 10V:105mohm; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRLR3410; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

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