Infineon IRL3803SPBF

Name: Infineon IRL3803SPBF
Brand: Infineon
SKU: IRL3803SPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.006 Ohm; Id 140A; D2PAK; Pd 200W; Vgs +/-16V

$ 5.37

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRL3803SPBF	0	450	Bulk				5.370	4.990	19h
Microchip USA	IRL3803SPBF	232	300	Bulk				9.490	9.490	1h
Win Source	WS-IRL3803SPBF	9,000	40				1.325	1.102	1.102	8h
Worldway Electronics	IRL3803SPBF	16,185	7	Tube		5.692	5.585	5.370	5.263	7h
Fly-Wing Technology	IRL3803SPBF	36,244			2.148	1.763	1.708	1.598	1.598	5h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL3803SPBF.

IHS

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

Newark

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-19

Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRL3803SPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;D2Pak;PD 200W;VGS +/-16V

RS (Formerly Allied Electronics)

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK

Avnet

MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 200 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, 30V, 140A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:140A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation on 1 Sq. PCB:3.7W; Pulse Current Idm:470A; SMD Marking:L3803S; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

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