Infineon IRFS7730TRLPBF

Name: Infineon IRFS7730TRLPBF
Brand: Infineon
SKU: IRFS7730TRLPBF

Infineon N-Channel MOSFET HEXFET, Vds=75V, Id=246A, D2PAK (TO-263), SMD, 3-Pin

$ 1.93

Production

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor

SKU

Min

Pkg

Bulk Pricing

Newark

IRFS7730TRLPBF

267

Cut Tape

USD

USD

Tape & Reel

USD

USD

11h

RS (Formerly Allied Electronics)

IRFS7730TRLPBF

Bulk

USD

5.680

5.430

22h

Inventory History

3 month trend: -15.97%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS7730TRLPBF.

IHS

Datasheet12 pages11 years ago

element14 APAC

Future Electronics

Inventory History

3 month trend:

-15.97%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS7730TRLPBF

InfineonIRFS7730PBF

Price @ 1000

$ 1.93

$ 1.24

Stock

211,905

214,269

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

Rds On Max

2.6 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

375 W

Input Capacitance

13.66 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-01-18

Lifecycle StatusProduction (Last Updated: 7 months ago)

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Descriptions

Descriptions of Infineon IRFS7730TRLPBF provided by its distributors.

Infineon N-Channel MOSFET HEXFET, Vds=75V, Id=246A, D2PAK (TO-263), SMD, 3-Pin

Unikeyic (ICkey)

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 75V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N-CH, 75V, 195A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

Farnell

Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

Infineon