Infineon IRFR2405TRLPBF
$ 0.655
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusProduction (Last Updated: 8 months ago)
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Descriptions
Descriptions of Infineon IRFR2405TRLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55V 16 mOhm 70 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating56 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance16 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max16 mΩ
Rise Time130 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)55 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements