Infineon IRFP3415PBF

Name: Infineon IRFP3415PBF
Brand: Infineon
SKU: IRFP3415PBF

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 0.042 Ohm; Id 43A; TO-247AC; Pd 200W; Vgs +/-20V

$ 1.918

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFP3415PBF	1,723					1.510	1.350	1.270	22h
Arrow Electronics	2	IRFP3415PBF	390	1		3.822	2.689	1.918	1.918	1.918
RS (Formerly Allied Electronics)		IRFP3415PBF	0	375	Bulk				3.280	2.190	11h
Farnell	2	IRFP3415PBF..	0	1		3.337*	2.516*	2.018*	1.655*	1.655*	22h
Win Source	2	WS-IRFP3415PBF	10,529	30				1.439	1.169	1.169	22h

Inventory History

3 month trend: -1.75%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFP3415PBF.

element14 APAC

Datasheet9 pages21 years ago

IHS

Newark

RS (Formerly Allied Electronics)

Jameco

Inventory History

3 month trend:

-1.75%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-08-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRFP3415PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-247AC;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 150 V 0.042 Ohm 200 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

IRFP3415PBF,MOSFET, 150V, 43A, 42 MOHM, 133.3 NC QG, TO-247A

Jameco

150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

N Channel Mosfet, 150V, 43A, To-247Ac; Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 43 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 42 / Gate-Source Voltage V = 20 / Fall Time ns = 69 / Rise Time ns = 55 / Turn-OFF Delay Time ns = 71 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

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