Infineon IRF9392PBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-30
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Related Parts
InfineonIRF9392TRPBF
MOSFET P-CH 30V 9.8A 8SO P-Channel 30 V 9.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
STMicroelectronicsSTS11NF30L
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
Descriptions
Descriptions of Infineon IRF9392PBF provided by its distributors.
MOSFET P-CH 30V 9.8A 8SO P-Channel 30 V 9.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
TUBE / MOSFET, P-CHANNEL, -30V, -9.8A, 17.5 mOhm, 25Vgs, SO-8
Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC Bulk
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.8 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)-30 V
Fall Time58 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.27 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max12.1 mΩ
Rise Time47 ns
Turn-Off Delay Time73 ns
Turn-On Delay Time15 ns
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements