Infineon IRF8304MTRPBF
Trans MOSFET N-CH 30V 28A 7-Pin Direct-FET MX T/R
$ 0.822
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descriptions
Descriptions of Infineon IRF8304MTRPBF provided by its distributors.
Trans MOSFET N-CH 30V 28A 7-Pin Direct-FET MX T/R
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
IRF8304 - 12V-300V N-CHANNEL POW "N-Channel 30 V 28A (Ta), 170A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DirectFET™ Isometric MX"
2.8W(Ta)，100W(Tc) 20V 2.35V@ 100µA 42nC@ 4.5 V 1individualNChannel 30V 2.2mΩ@ 28A,10V 28A，170A 4.7nF@15V WDSON-5 direct mounting，SMD mount 3mm*3mm*1.11mm
MOSFET, N-CH, 30V, 28A, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance2.2 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max2.2 mΩ
Rise Time22 ns
Schedule B8541290080
Turn-Off Delay Time19 ns
Turn-On Delay Time16 ns
Dimensions
Height700 µm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements