Infineon IRF7834TRPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7834TRPBF | 0 | 4K | Bulk | 16h | |||||||
| Farnell | IRF7834TRPBF | 0 | 1 | Cut Tape | 3h | |||||||
| Win Source | WS-IRF7834TRPBF | 4,688 | 60 | 4h | ||||||||
| Worldway Electronics | IRF7834TRPBF | 16,975 | 7 | Tape & Reel | 2h | |||||||
| ICPartonline | IRF7834TRPBF | 31,251 | >1wk |
CAD Models
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| source | eCAD | mCAD | FILES |
|---|---|---|---|
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | Download |
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.576
Stock
131,713
77,431
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
19 A
19 A
Threshold Voltage
-
-
Rds On Max
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
3.71 nF
3.71 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Descriptions
Descriptions of Infineon IRF7834TRPBF provided by its distributors.
Single N-Channel 30 V 4.5 mOhm 29 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
T&R / MOSFET, 30V, 19A, 4.5 mOhm, 29 nC Qg, SO-8
Trans MOSFET N-CH 30V 19A 8-Pin SOIC T/R
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET, N-CH, 30V, 19A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Powe
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Technical
Continuous Drain Current (ID)19 A
Current Rating19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.71 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max4.5 mΩ
Resistance4.5 MΩ
Rise Time14.3 ns
Turn-Off Delay Time18 ns
Turn-On Delay Time13.7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements