Infineon IRF7580MTRPBF
60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS
$ 1.421
Obsolete
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Inventory History
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-02-22
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
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Descriptions
Descriptions of Infineon IRF7580MTRPBF provided by its distributors.
60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS
Infineon SCT
Single N-Channel 60 V 2.9 mOhm 120 nC HEXFET® Power Mosfet - DirectFET®
115W(Tc) 20V 3.7V@ 150µA 180nC@ 10V 1individualNChannel 60V 3.6mΩ@ 70A,10V 114A 6.51nF@25V WDSON-8 direct mounting，SMD mount 6.35mm*5.05mm*700μm
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
Mosfet, N-Ch, 60V, 114A, Directfet Me; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0029Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Rohs Compliant: Yes |Infineon Technologies IRF7580MTRPBF
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins10
Number of Terminals6
Technical
Continuous Drain Current (ID)114 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.6 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.51 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.6 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation115 W
Rds On Max3.6 mΩ
Rise Time38 ns
Schedule B8541290080
Turn-Off Delay Time53 ns
Turn-On Delay Time20 ns
Dimensions
Height700 µm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements