Infineon IRF7469PBF

Name: Infineon IRF7469PBF
Brand: Infineon
SKU: IRF7469PBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 12 Milliohms; Id 9A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7469PBF	0	3800	Bulk					1.240	5h
Farnell	IRF7469PBF	0	5			0.464*	0.319*	0.301*	0.301*	1h
Win Source	WS-IRF7469PBF	11,153	45				1.193	0.796	0.796	16h
Worldway Electronics	IRF7469PBF	10,914	7	Tube		0.188	0.184	0.177	0.174	1d
ICPartonline	IRF7469PBF	15,358			0.465	0.442	0.418	0.395	0.372	>1wk

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7469PBF.

IHS

Datasheet9 pages21 years ago

Datasheet8 pages21 years ago

Future Electronics

RS (Formerly Allied Electronics)

TME

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-11-13

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

Related Parts

InfineonIRF7469TRPBF

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V

Details

InfineonIRF7240PBF

MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 0.015Ohm;ID -10.5A;SO-8;PD 2.5W;VGS +/-20V

Details

InfineonIRF7811AVPBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20

Details

onsemiFDS8878

N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Details

onsemiFDS4480

N-Channel 40 V 12 mOhm SMT PowerTrench® Mosfet - SOIC-8

Details

onsemiFDS8880

TRANSISTOR, SINGLE, N-CHANNEL, POWERTRENCH MOSFET, 30V, 11.6A, SOIC8

Details

Descriptions

Descriptions of Infineon IRF7469PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 40 V 17 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:73A; Row Pitch:6.3mm; SMD Marking:IRF7469PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

element14 APAC