Infineon IRF7410PBF

Name: Infineon IRF7410PBF
Brand: Infineon
SKU: IRF7410PBF

INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7410PBF	0	3800	Bulk					0.720	22h
Farnell	IRF7410PBF	0	5			1.443*	0.565*	0.471*	0.457*	5h
Win Source	WS-IRF7410PBF	106,600	75				0.776	0.517	0.517	7h
Worldway Electronics	IRF7410PBF	14,584	7	Tube		0.175	0.170	0.161	0.161	6h
ICPartonline	IRF7410PBF	5,423			26.000	24.700	23.400	22.100	20.800	3d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7410PBF.

Newark

Datasheet9 pages17 years ago

Datasheet9 pages19 years ago

IHS

RS (Formerly Allied Electronics)

Jameco

CAD Models

Download Infineon IRF7410PBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-07-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

Related Parts

InfineonIRF7410GTRPBF

Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8

Details

VishaySI4866BDY-T1-E3

Si4866BDY Series N-Channel 12 V 5.3 mOhms Surface Mount Power Mosfet - SOIC-8

Details

InfineonIRF7420TRPBF

Single P-Channel 12 V 14 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

Details

InfineonIRF7834TRPBF

Single N-Channel 30 V 4.5 mOhm 29 nC HEXFET® Power Mosfet - SOIC-8

Details

InfineonIRF8113GPBF

N CH POWER MOSFET, HEXFET, 30V, 17.2A, SOIC-8; Transistor Polarity:N Channel; Co

Details

VishaySI4884BDY-T1-E3

Single N-Channel 30 V 0.009 Ohms Surface Mount Power Mosfet - SOIC-8

Details

Descriptions

Descriptions of Infineon IRF7410PBF provided by its distributors.

INFINEON IRF7410PBF MOSFET Transistor, P Channel, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV

Fly-Wing Technology

MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

RS (Formerly Allied Electronics)

Transistor MOSFET Positive Channel 20 Volt 16A 8-Pin SOIC

Jameco

Single P-Channel 12 V 7 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon

MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:12V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-16A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:65A; Row Pitch:6.3mm; SMD Marking:F7410; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:-4.5V

element14 APAC