Infineon IRF6665TR1PBF
$ 2.85
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF6665TR1PBF.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-25
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
Related Parts
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
Descriptions
Descriptions of Infineon IRF6665TR1PBF provided by its distributors.
DIGITAL AUDIO 100V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET SH PKG
DIGITAL AUDIO MOSFET Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, DIRECTFET, 100V, SH; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6665; Current Id Max:3.4A; Package / Case:SH; Power Dissipation Pd:2.2mW; Pulse Current Idm:34A; SMD Marking:2.2; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes specifically designed for Class-D audio amplifier applications. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part nu
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance62 mΩ
Drain to Source Voltage (Vds)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time4.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance530 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-40 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation42 W
Rds On Max62 mΩ
Resistance62 MΩ
Rise Time2.8 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time14 ns
Turn-On Delay Time7.4 ns
Voltage Rating (DC)100 V
Dimensions
Height506 µm
Length4.826 mm
Width3.95 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF6665TR1PBF.
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements