Infineon IRF3415STRLPBF
$ 0.88
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Inventory History
3 month trend: +18.70%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF3415STRLPBF.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-17
Lifecycle StatusProduction (Last Updated: 6 months ago)
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Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Descriptions
Descriptions of Infineon IRF3415STRLPBF provided by its distributors.
MOSFET N-CH 150V 43A D2PAK "N-Channel 150 V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK"
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;D2Pak;PD 200W;VGS +/-20V
Single N-Channel 150 V 0.042 Ohm 200 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 150V 43A D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 150 V, 43 A, 0.042 ohm, TO-263AB, Surface Mount
IRF3415STRLPBF,MOSFET, 150V, 4 3A, 42 MOHM, 133.3 NC QG, D2-
3.8W(Ta)，200W(Tc) 20V 4V@ 250µA 200nC@ 10 V 1individualNChannel 150V 42mΩ@ 22A,10V 43A 2.4nF@25V D2PAK SMD mount 5.08mm(height)
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:43A; On Resistance, Rds(on):42mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +18.70%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)43 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance42 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance42 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max42 mΩ
Resistance4.2 MΩ
Rise Time55 ns
Schedule B8541290080
Turn-Off Delay Time71 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)150 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF3415STRLPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements