Infineon IRF100B202
$ 0.741
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +0.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download Infineon IRF100B202 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 3 months ago)
Related Parts
onsemiNDPL100N10BG
MOSFET N-CH 100V 100A TO220 / Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-220 Tube
InfineonIRFB3407ZPBF
Trans MOSFET N-CH Si 75V 122A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 75V 120A TO-220
InfineonIPP100N08S2L07AKSA1
MOSFET N-CH 75V 100A TO220-3 N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
STMicroelectronicsSTP110N8F6
N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package
Descriptions
Descriptions of Infineon IRF100B202 provided by its distributors.
MOSFET N-CH 100V 97A TO220AB N-Channel 100 V 97A (Tc) 221W (Tc) Through Hole TO-220AB
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
TUBE / MOSFET, 100V, 97A, 8.6 mOhm, 77nC, TO-220
Trans MOSFET N-CH 100V 97A 3-Pin(3+Tab) TO-220AB Tube
IRF100B202 Single N-Channel 100 V 8.6 mOhm HEXFET Power MOSFET - TO-220-3
Power Field-Effect Transistor, 97A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 100V, 97A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 97A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8.6 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.476 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation221 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.6 mΩ
Package Quantity1000
Power Dissipation221 W
Rds On Max8.6 mΩ
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time11 ns
Dimensions
Height20.57 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements