Infineon IPN65R1K5CEATMA1
$ 0.251
Obsolete
Price and Stock
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SKU
Min
Pkg
Bulk Pricing
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPN65R1K5CEATMA1.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-04-29
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2024-04-15
LTD Date2024-10-15
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Descriptions
Descriptions of Infineon IPN65R1K5CEATMA1 provided by its distributors.
MOSFET N-CH 650V 5.2A SOT223 / N-Channel 650 V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223
5W(Tc) 3.5V@ 100¦ÌA 10.5nC@ 10 V 1N 650V 1.5¦¸@ 1A,10V 225pF@100V SOT-223-3 6.7mm*1.7mm
Non-Compliant Tape & Reel No SVHC SOT-223 3 Production (Last Updated: 2 years ago) 3000
CoolMOS CE Power Transistor N-Channel 650V 9.2A 3-Pin SOT-223
Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):1.35Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPN65R1K5CEATMA1
Infineon is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageSOT-223
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.2 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)650 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage650 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.5 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation5 W
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time5.9 ns
Turn-On Delay Time7.7 ns
Dimensions
Height1.8 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPN65R1K5CEATMA1.
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCNo
RoHSCompliant
Compliance Statements